摘要: Linear and hyperbranched poly(azomethine)s (PAMs)-based on tri- phenylamine moieties are synthesized and used as the functioning layers in the Ta/PAM/Pt resistive switching memory devices. Com- parably, the hyperbranched PAM with isotropic architecture and semi-crystalline nature shows enhanced memory behaviors with more uniform distribution of the HRS and LRS resistances.
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分类:
物理学
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普通物理:统计和量子力学,量子信息等
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引用:
ChinaXiv:201705.00065
(或此版本
ChinaXiv:201705.00065V1)
DOI:10.12074/201705.00065V1
CSTR:32003.36.ChinaXiv.201705.00065.V1
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科创链TXID:
1dc1e2d8-f9b9-4c05-b950-86788d56de78
- 推荐引用方式:
Zhang, WB [Zhang, Wenbin][ 1,2 ],Wang, C [Wang, Cheng][ 3 ],Liu, G [Liu, Gang][ 1 ],Wang, J [Wang, Jun][ 2 ],Chen, Y [Chen, Yu][ 3 ],Li, RW [Li, Run-Wei][ 1 ].Structural effect on the resistive switching behavior of triphenylamine-based poly[azomethine]s.null.[DOI:10.12074/201705.00065V1]
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