摘要:
We studied the carrier dynamics in a series of SnOx thin films using femtosecond transient absorption (TA) spectroscopy. The observed carrier relaxation was found to be strongly dependent on thin film stoichiometry. The TA spectra corresponding to free carriers, trapped carriers, and state filling were observed in the picosecond time region for SnO2, SnOx, and SnO film, respectively. The TA decay kinetics of all films were best fit with a tri-exponential decay model with fast (1 ps), medium ( 10 ps), and slow (ns) components. Our results revealed the carrier relaxation and recombination processes in SnOx thin films, identifying the critical role of stoichiometry in photo-induced phenomena.
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分类：
物理学
>>
普通物理:统计和量子力学,量子信息等
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引用：
ChinaXiv:201705.00580
(或此版本
ChinaXiv:201705.00580V1)
DOI:10.12074/201705.00580V1
CSTR:32003.36.ChinaXiv.201705.00580.V1
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科创链TXID：
c24765b0-3f26-49b7-a149-0c65dc171acd
- 推荐引用方式：
Li, ZG [Li, Zhong-guo][ 1 ],Liang, LY [Liang, Lingyan][ 2 ],Cao, HT [Cao, Hongtao][ 2 ],Xiao, ZG [Xiao, Zhengguo][ 1 ],Wu, XZ [Wu, Xingzhi][ 1 ],Fang, Y [Fang, Yu][ 3 ],Yang, JY [Yang, Junyi][ 3 ],Wei, TH [Wei, Tai-Huei][ 1 ],Song, YL [Song, Ying-lin][ 1,3 ].Ultrafast carrier dynamics in SnOx thin films.null.[DOI:10.12074/201705.00580V1]
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