Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s 后印本

作者： Zhang, WB ^{Zhang, Wenbin} Wang, C ^{Wang, Cheng} Liu, G ^{Liu, Gang} Wang, J ^{Wang, Jun} Chen, Y ^{Chen, Yu} Li, RW ^{Li, Run-Wei}
作者单位：

1. Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China.

2. Department of Physics, Ningbo University, Ningbo 315211, China

3. Institute of Applied Chemistry, East China University of Science and Technology, Shanghai, 200237, China.
提交时间：2017-04-06 10:58:29

摘要: Linear and hyperbranched poly(azomethine)s (PAMs)-based on triphenylamine moieties are synthesized and used as the functioning layers in the Ta/PAM/Pt resistive switching memory devices. Comparably, the hyperbranched PAM with isotropic architecture and se

MEMORY DEVICES POLYMERS POLYAZOMETHINE MOIETIES CRYSTALLIZATION COPOLYMER TRANSPORT MOBILITY ACCEPTOR FILMS

分类： 物理学 >> 普通物理:统计和量子力学,量子信息等
引用： ChinaXiv:201704.00086 (或此版本 ChinaXiv:201704.00086V1)
DOI:10.12074/201704.00086V1
CSTR:32003.36.ChinaXiv.201704.00086.V1
科创链TXID： 281fbcd9-feec-48c6-ad73-dcffeef00d44
推荐引用方式： Zhang, WB,Wang, C,Liu, G,Wang, J,Chen, Y,Li, RW.Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s.null.[DOI:10.12074/201704.00086V1] (点此复制)

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ChinaXiv:201704.00086V1

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Structural effect on the resistive switching behavior of triphenylamine-based poly(azomethine)s 后印本

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