Modeling Single-Event Transients in SiGe HBT Low-Noise Amplifiers Incorporating a Look-Up Table Approach

摘要: A germanium-silicon heterojunction bipolar transistor (SiGe HBT) is modeled using Technology Computer-Aided Design (TCAD) simulations. The resulting device model serves as the basis for constructing a low-noise amplifier (LNA) circuit, which is subsequently used to perform mixed-mode simulations of single-event transient (SET) effects. To efficiently evaluate the radiation response of the circuit, a look-up table method is implemented to inject SET-coupled disturbances into the SiGe HBT LNA. Heavy-ion incidence simulations are carried out in the analog circuit simulation platform to compare with the results of mixed-mode simulations. The SET under different ion conditions-including linear energy transfer (LET), angle of incidence, and characteristic radius are analyzed.